ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The densities and mobilities of the individual heavy- and light-hole carriers have been simultaneously determined at various temperatures (40 K to 130 K) in three p-type, single-crystal Si samples. The separation of the two-hole components is achieved by multicarrier analyses of magnetic-field-dependent Hall and resistivity measurements within the two-carrier approximation of the reduced-conductivity-tensor scheme. The explicit experimental values for the densities and mobilities of the two-hole components obtained in this work should be considered as a valuable addition to the existing database for silicon material parameters. They should also be useful to silicon device physics and modeling.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.363403