ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on novel results from a systematic study of excitonic transitions in high quality metalorganic vapor phase epitaxy grown InxGa1−xAs/InP quantum wells (QWs). The electronic structure of the QWs has been studied as a function of QW width as well as the built-in strain. The characterization has been performed by means of a combined Fourier transform photoluminescence (FTPL) and FTPL excitation study of the InxGa1−xAs/InP QWs. Detailed information on the energy positions for the excitons associated with various subbands (for the electrons, heavy and light holes) up to n=5 have been obtained. The experimentally determined energy positions have been compared with theoretical predictions based on an effective mass model and bulk deformation potential theory. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363752