Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 3921-3926
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report Raman scattering studies of phosphorus-ion-implanted and subsequently pulse laser annealed (PLA) GaAs. The threshold value of implantation fluence for the disappearance of one-phonon modes in the Raman spectrum of ion-implanted GaAs sample is found to be greater than that for the two-phonon modes by an order of magnitude. The phonon correlation length decreases with increasing disorder. The lattice reconstruction process during PLA creates microcrystallites for incomplete annealing, whose sizes can be given by the phonon correlation lengths, and are found to increase with the annealing power density. The intensity ratio of the Raman spectra corresponding to the allowed longitudinal-optical (LO)-phonon mode to the forbidden transverse-optical (TO)-phonon mode, ILO/ITO, is used as a quantitative measure of crystallinity in the implantation and PLA processes. The threshold annealing power density is estimated to be 20 MW/cm2 for 70 keV phosphorus-ion-implanted GaAs at a fluence of 5×1015 ions/cm2. The localized vibrational mode of phosphorus is observed in PLA samples for fluences above 1×1015 ions/cm2. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361818
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