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On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)

Hao, P. H. ; Wang, L. C. ; Deng, Fei ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 4211-4215

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361788

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