Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 3560-3566
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of holes and hillocks in thin films has been reported extensively and for a multitude of film–substrate systems. A recently developed model [F. Y. Génin, J. Appl. Phys. 77, 5130 (1995)] which analyzes the formation of a ridge at a traveling grain boundary due to stress and capillarity driving forces provides a quantitative description of the growth of the hillocks. In order to test the model, the surface morphology of aluminum thin films deposited on oxidized silicon substrates and annealed at 450 °C in argon is investigated; the profiles of thermal hillocks are measured by atomic force microscopy. The comparison shows excellent agreement between modeled and experimental profiles. ©1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361408
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