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Optical absorption of free-standing porous silicon films (1996)

Chan, M. H. ; So, S. K. ; Cheah, K. W.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 3273-3275

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si–H stretching overtones and combination bands of Si–F and Si–H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361216

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