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A comparison of annealing kinetics in crystalline and amorphous InP (1996)

Cliche, L. ; Roorda, S. ; Kajrys, G. E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 2142-2144

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Relaxation of ion-induced strain in crystalline InP is compared with structural relaxation of amorphous InP. Crystalline InP was bombarded with Se ions at low fluence to produce a damaged surface layer. The room temperature evolution of strain in this layer was determined by high-resolution x-ray diffraction and compared to the evolution of the defect-activated viscosity of amorphous InP during similar room temperature structural relaxation. Both processes can be described by double exponential decay functions with characteristic times of a few hours to a few days. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361073

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