ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An improved approach is presented for the analysis of positron beam Doppler broadening data. Instead of analyzing the energy-dependent shape parameter, the so-called S(E) data, we combined the shape S(E) and wing W(E) data by plotting them as a trajectory in the S–W plane, using the implantation energy as a running parameter. It is shown that this plot is of particular interest for the qualitative interpretation of the data. Furthermore, it allows the independent determination of the characteristic shape and wing parameters of the different positron trapping layers without the use of a numerical simulation and fitting program. The method and its advantages and limitations are illustrated for three cases: a silicon sample implanted with helium, a metal–oxide–silicon system subjected to a bias voltage and a bare oxide layer on silicon. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362635
