ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Sol-gel derived 10% Pb excess Pb(Zr0.52Ti0.48)O3 (PZT) layers placed at the top and bottom of rf-sputtered PZT films are very effective in decreasing the microcracks occurring on the surface of rf-sputtered PZT films during postannealing at 600, 650, and 700 °C. The deposition of PZT films is conducted on Pt/Ti/SiO2/Si(100) substrates at room temperature. The surface microstructure and crystallographic structure of buffered PZT films are investigated through scanning electron microscopy and x-ray-diffraction analysis. In addition, electrical measurements are also examined through hysteresis, dielectric constant and loss, J–V, and fatigue measurements. The P–E hysteresis measurements show an increase in the remanent polarization (12.1, 22.45, 34.64 μC/cm2) and a decrease in the coercive fields (108, 72.9, 68.3 kV/cm) with the increase of postannealing temperature. Dielectric constant and tan δ are varied from 523 to 1330 and 0.0274 to 0.0738 with the increase of annealing temperature. By applying 1 MHz rectangular pulse up to 5×1010 cycles for fatigue test, the 33% reduction of polarization is also observed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362599
