Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 8210-8215
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Bi12(GaxBi1−x)O19.5 (BGaO) films with thickness in the range 100–1000 nm have been deposited on (100) Y-stabilized zirconia (YSZ) and (100) Bi12GeO20 (BGO) substrates using a KrF excimer pulsed laser and polycrystalline targets with composition x=0.63–0.72. The laser power density threshold for ablation of the targets has been determined to be J0=4.8 J/cm2. A deposition rate of 0.03 A(ring)/pulse was found for the substrate-target distance (6 cm) and laser fluence (J=7 J/cm2) used. Transparent and crystalline films were obtained heating the substrate in the 450–550 °C range under 1.5×10−1 mbar of oxygen pressure. Films deposited on hot substrates have a Ga stoichiometry x=0.5 but a Bi content slightly lower than that corresponding to sillenite. Films deposited on YSZ show preferential orientation. From the x-ray diffraction results and the comparison of the ionic distributions, it has been concluded that the most likely orientation between both lattices is 〈310〉{130}BGaO(parallel)〈011〉{100}YSZ. A {100}BGaO(parallel){100}BGO epitaxy has been inferred from Rutherford backscattering analysis. On both substrates the films behave as step waveguides with refractive index close to the value determined in bulk BGaO. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362461
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