Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 7743-7750
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We study the electrical activity of threading dislocation defects in relaxed GeSi films with a novel, high-resolution optical technique. A near-field scanning optical microscope is used to measure spatially resolved photoresponse while simultaneously imaging the surface topography. We have convincingly established that shallow topographic depressions in these films are electrically active threading dislocations. The apparent sizes of the dislocations in the photovoltage images are in agreement with estimates based on the junction geometry and the near-field optical excitation spot size. We can clearly observe photoresponse changes at ≤100 nm lateral scale, a tenfold improvement from far-field optical techniques. This higher resolution is due to reduction of the excitation volume and of the carrier lifetime near defects. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362378
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