ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Structural and electronic transport properties of ReSi2−δ single crystals (1995)

Gottlieb, U. ; Lambert-Andron, B. ; Nava, F. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 3902-3907

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We investigated some structural and transport properties of semiconducting ReSi2−δ . In the literature this silicides is reported to crystallize in an orthorhombic structure and to be stoichiometric ReSi2. Our investigations clearly show that the stable composition is ReSi1.75 crystallizing in the space group P1. Transport measurements show thermally activated behavior at high temperatures with one (or two) energy gap Eg=0.16 (0.30 eV). We also report Hall-effect measurements on this material: we found that RH is positive between 30 and 660 K and at room temperature the Hall number nH=1/eRH is equal to 3.7×1018 cm−3. The Hall mobility at room temperature is relatively high (μH=370 cm2/V s) for a single crystal. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360707

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit