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Deep levels in nitrogen-implanted n-type GaAs (1995)

Chen, K. M. ; Jia, Y. Q. ; Chen, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 4261-4263

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359889

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