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The gettering of copper by keV implantation of germanium into silicon (1995)

Barbero, C. J. ; Corbett, J. W. ; Deng, C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 3012-3014

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The gettering of copper by keV implantation of germanium into silicon is investigated. Germanium is implanted at a fixed energy with varying doses into the front side of silicon samples. Copper is thermally evaporated on the backside of the samples and then annealed at 900 °C for 1 h and 10 h, respectively, to allow in-diffusion of the transition metal. Rutherford backscattering spectroscopy, secondary-ion-mass spectroscopy, and cross-section transmission electron microscopy are used to demonstrate that gettering of copper is achieved through stacking faults created by heavy dose germanium implantation and solid-phase epitaxy. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360050

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