ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Schottky contacts were formed on Cl-doped N-type lattice matching ZnS0.07Se0.93 epilayers grown on (100) N-GaAs substrates by molecular beam epitaxy for metals with different work functions, Yb, Al, Cr, Cu, Au, and Pd. Temperature-dependent current-voltage and capacitance-voltage (C-V) measurements show a clear relation between Schottky barrier height and metal work function which cannot be predicted by the linear Schottky contact theory, ΦSB=ΦM−χ. The pinning effect is believed to exist at the metal-semiconductor interface with a wide range of Fermi level pinning positions. Thermionic emission dominates the current transport mechanism and the current is limited by the ZnSSe/GaAs heterojunction under a relatively high positive bias. A symmetriclike C-V characteristic is explained by the Schottky barrier-heterojunction model and a fairly constant heterojunction barrier height, ΦHJ, is obtained for Schottky diodes using different metals. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358645
