Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 1621-1626
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this study, transport properties of InP/Si heteroepitaxial layers were investigated. Current-voltage characteristics, measured across the heterointerface, revealed diode behavior at 300 K only with Si of p-type conductivity. With n-type Si, a transition from Ohmic behavior at 300 K to a diode characteristic at low temperatures was observed at 250 K. Due to the efficient electrical isolation of layer and p-type substrate van der Pauw measurements with InP/p-Si could be analyzed in the conventional manner. For InP/n-type Si the applicability of the two-layer conduction model suggested by Petritz could be demonstrated for 300 K measurements. With decreasing temperature a pronounced deviation from the model occurred due to the increased effect of the heterointerface. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358917
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