Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 641-645
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Homoepitaxial diamond films were grown at temperatures between 1000 and 1400 °C with an oxy-acetylene torch. The growth rates of the {100} and {111} faces were observed to increase through 1400 °C, while the {110} face did not grow above 1400 °C. The quality of all faces deteriorated significantly between 1300 and 1400 °C, as shown by scanning electron microscopy and Raman spectroscopy. The transparency of a film as measured by Fourier-transform infrared spectroscopy was type-IIa quality with very little C–H absorption.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359518
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