Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 731-738
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The heterointerface p-CuInSe2/CdS was investigated by soft x-ray photoelectron spectroscopy. CdS was deposited sequentially in steps onto CuInSe2 (011) cleavage planes at room temperature (RT) and at elevated temperatures ((approximately-greater-than)120 °C). At RT a nonreactive interface to cubic CdS is formed. The valence band and conduction-band discontinuities are determined to be 0.8 and 0.7 eV, respectively. A band bending of 0.9 eV is deduced for the p-type substrate. Annealing to temperatures above 120 °C leads to the formation of a CuxS reactive layer at the interface. As a consequence the valence-band offset and band bending is found to be considerably reduced. The experimentally determined band energy diagram is in agreement with heterojunctions of zincblende-type semiconductors, and its consequences for solar cells are discussed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359583
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