Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 5611-5615
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Chemical vapor deposited 3C-SiC films were micromachined into free standing cantilevers and their anelastic and elastic properties were determined by a vibrating reed technique. Despite a high density of defects, epitaxial 3C-SiC exhibits extremely high mechanical Q which is essential for resonator sensors and actuators. An anelastic relaxation peak was found with an associated activation energy of 0.94 eV. Doping caused splitting of this peak. The mechanism of the mechanical relaxation peak is discussed in relation to defect movement under stress. Young's modulus of epitaxial undoped 3C-SiC was found to be 694 GPa, p-doping reduced it to 474 Gpa. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359551
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