Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 5458-5460
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We found that application of ultrasound vibrations to p-type silicon promotes a dissociation of iron-boron pairs. This effect is manifested by a decrease of the minority carrier diffusion length, L, after ultrasound treatment (UST) of the silicon wafer. Post-UST recovery of the diffusion length is identical after thermal and optical pair dissociation. This provides an unambiguous proof for dissociation of Fe-B pairs stimulated by ultrasound vibrations. The UST process creates interstitial iron donors which acts as efficient recombination centers and lower the L value. A relevant physical mechanism of the ultrasound effect is discussed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359243
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