Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5423-5428
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2×1017 cm−3 have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.357197
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