Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 2918-2923
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A quantum molecular dynamics study of the interface formation of the Al/GaAs(110) and In/GaAs(110) interfaces has been performed. It is found that, at very low coverages, both Al and In atoms chemisorb on threefold coordinated sites, bonded to two As atoms and one Ga atom. The metal atoms attract each other on the GaAs surface and tend to form islands. The electronic structure for one monolayer is found to be semiconducting for both In and Al. The results presented here are consistent with the temperature-dependent evolution of Fermi level from the very low metal coverage limit to the overlayer limit for the deposition of In and Al on GaAs(110).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357530
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