Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 8146-8149
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-Tc superconducting field effect transistors using CeO2 as the dielectric layer in combination with ultrathin YBa2Cu3O7−δ layers have been prepared and investigated. The preparation process of these devices is described in detail. CeO2 is very compatible with ultrathin YBa2Cu3O7−δ layers, resulting in Tc values consistent with SrTiO3-based superconducting field effect transistors. The dielectric constant and the breakdown field of the CeO2 layer are reproducible in all investigated samples, yielding values for εr≈20 and Ebd≈2×108 V/m. This results in a charge transfer of ΔN=±2 μC/cm2. In the charge carrier enhancement mode this value is close to SrTiO3-based superconducting field effect transistors. So far, the maximum achieved modulation of the charge carrier density by the use of CeO2 as dielectric is 1.5%. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357865
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
