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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4501-4509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of free standing 75-nm-thick thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 °C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400–700 °C were made in argon, oxygen, and nitrogen/hydrogen atmospheres. The results are interpreted in terms of a crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb2(Zr,Ti)2O6, rather than pyrochlore-type Pb2(Zr,Ti)2O6+X, where 0〈X〈1 or −1〈X〈0, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results may have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase may prove detrimental for these properties.
    Type of Medium: Electronic Resource
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