Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 3477-3484
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 °C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 °C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356109
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