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Carrier recombination in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy (1994)

Wijewarnasuriya, P. S. ; Lange, M. D. ; Sivananthan, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 1005-1009

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report the recombination mechanisms of minority carrier lifetime in indium-doped layers of (211)B Hg1−xCdxTe(x ≈ 23.0% ± 2.0%)n-type grown by molecular beam epitaxy. Measured lifetimes were explained by an Auger limited band-to-band recombination process in this material, even in the extrinsic temperature region. Frequently, in some of the layers, a combination of the band-to-band recombination mechanisms together with recombination at the Shockley–Read single level 33 to 45 meV below the conduction band was necessary to explain the measured data. Results indicate that these defects have acceptorlike characteristics and their origin is related to Hg vacancies.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356506

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