ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ge-Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 Ω mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is of the order of 100 nm. Secondary ion mass spectroscopy analysis indicates that Ge diffusion is limited to within 2000 A(ring) of the surface for a concentration of 1017 cm−3 in samples annealed at 540 °C and below.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354163