Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 3614-3616
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A study of epitaxial growth of YBa2Cu3O7−δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZ(backward-slash)Y2O3 double and YSZ/Y2O3(backward-slash)YSZ triple layers allows the deposition of thin YBa2Cu3O7−δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7−δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354500
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |