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Water vapor controlling selective reactive ion etching of SiO2/Si in NF3 plasma (1993)

Konuma, M. ; Bauser, E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 1575-1578

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Water vapor added to NF3 plasma during reactive ion etching controls the ratio of the etch rates of SiO2 and Si. Selectivity rises from a value of 0.14 at water-free 100% NF3 to 1.99 for an initial gas composition of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354830

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