Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 1100-1105
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Impact ionization rate in SiO2 was numerically calculated using both pseudo-wave functions and energy band structure based on a self-consistent pseudopotential method. To avoid numerical complexity due to amorphous structure, SiO2 was assumed to be a crystalline α-quartz. The calculated impact ionization rate shows a strong wave vector anisotropy near a threshold energy regime, primary electrons existing at Γ point yield the strongest impact ionization rate. It was found that calculated results are not expressed by a Keldysh formula since SiO2 has complex band structure (e.g., indirect transition gap and nonparabolic bands). The magnitude of the theoretical impact ionization rate was very close to the experimental results recently reported by E. Cartier and F.R. McFeely [Phys. Rev. B 44, 10689 (1991)]. Detailed theoretical study clearly demonstrates that the average energy of secondary generated carriers depends linearly on the energy of primary electrons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354959
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
