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Thermal stability and dopant drive-out characteristics of CoSi2 polycide gates (1993)

Chen, Wei-Ming ; Lin, Jengping ; Banerjee, Sanjay K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 4712-4714

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: BF2-implanted CoSi2 polycide gates that are stable at high temperatures up to 1000 °C have been fabricated. The use of CoSi2 polycide as a boron diffusion source was evaluated using a metal-oxide-semiconductor capacitor structure on a p-type Si substrate. This structure is useful in monitoring the diffusion of the electrically activated dopants from the silicide towards the polycrystalline silicon-SiO2 interface. Our results show that using BF2-implanted CoSi2 as a diffusion source is effective in doping polycrystalline silicon gates degenerately without any degradation of the polycide resistivity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352743

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