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Annealing studies of vacancies in proton irradiated silicon (1993)

Dannefaer, S. ; Mascher, P. ; Kerr, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 3740-3743

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Annealing of vacancies produced by heavy proton irradiation of float-zone (Fz) and P-doped Czochralski-grown (Cz) silicon has been investigated by positron lifetime spectroscopy. In Fz-Si divacancies are retained after irradiation, and these defects are completely annealed out at 700 °C. In Cz P-doped silicon, impurities are found to enhance both the amount of retained vacancies as well as the tendency for vacancy clustering. Two annealing stages appear at 100 °C and close to 450 °C which seem to be a result of interstitial migration. Vacancy migration takes place in a wide temperature range between 100 and 1000 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352905

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