ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ferromagnetic perpendicularly magnetized epitaxial thin films of τ (Mn,Ni)Al have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of τ MnAl and (Mn,Ni)Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16° and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352721