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  • 1
    Electronic Resource
    Electronic Resource
    1/f noise from levels in a linear or planar array. IV. The origin of the Hooge parameter (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4113-4117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In part III under this title, fluctuations in electron trapping at semiconductor dislocations are analyzed. In this contribution these fluctuations of trapped charge are related to mobility fluctuations and reasonable agreement is found with the Hooge [F. N. Hooge, Phys. Lett. A 29, 139 (1969)] expression for 1/f noise. The calculated noise power is found to be proportional to the dislocation density and varies inversely with the doping level ND at high ND. We conclude from the analysis that the calculated frequency span of 1/f noise from dislocations will only be wide if the dislocations are random; for aligned, impurity free dislocations a spectrum similar to generation-recombination noise will be observed. Such behavior is observed experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352217
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