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Thermally stable non-gold Ohmic contacts to n-type GaAs. II. NiSiW contact metal (1992)

Takata, H. J. ; Tanahashi, Kiwamu ; Otsuki, A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 4191-4196

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: New "nongold'' NiSiW Ohmic contacts to n-type GaAs have been developed using an electron beam evaporator and a rapid thermal annealer. Ohmic behavior was found to have dependencies on the Si concentrations of the NiSiW contacts and the annealing condition. The Ohmic contacts with 40 at. % Si, prepared by annealing at 650 °C, had smooth surfaces and yielded excellent thermal stability during subsequent annealing at 400 °C after contact formation. The microstructural analysis of the interface between the contact metal and the GaAs substrate was carried out using x-ray diffraction, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. It was concluded that the key parameter that influenced the electrical properties was the NiAs compounds formed during contact annealing.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.352229

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