Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 3155-3160
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 A(ring)) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a ((square root of)3×(square root of)3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351477
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