Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 5004-5006
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel method to fabricate stable Schottky diodes on n-type InP was reported. The method is based on the chemical adsorption of metals and their successive oxidation for growing very thin metal oxide layers on top of n-type InP substrates. Schottky diodes were formed by using Au electrodes and the current-voltage characteristics were evaluated. It was found that nearly ideal Schottky diodes with barrier heights as high as 0.73 V, ideality factor of 1.16, and the reverse current of 5.5×10−7 A/cm2 at −1 V could be reproducibly obtained. CdOx interfacial layers were analyzed by Auger electron spectroscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352027
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