Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 3934-3936
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Charge trapping and interface state generation in ultrathin (58-A(ring) equivalent oxide thickness) stacked Si3N4/SiO2 (NO) films prepared by rapid thermal processing have been studied. Results show that the charge trapping characteristics of stacked films is comparable to those of pure SiO2, but interface state generation, especially under positive gate polarity stressing, is significantly enhanced. The high interface state generation rate under positive gate bias in stacked NO layers is explained by enhanced hole injection from the gate due to the low hole injection barrier at the polycrystalline-Si gate/nitride interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349202
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