Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 3967-3969
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The quality of interfaces regrown by organometallic chemical vapor deposition is evaluated from the electrical characteristics of In0.53Ga0.47As/InP p-n heterojunction diodes. The I-V curves are undistinguishable from those of junctions obtained by continuous growth, with ideality factors η≈1.1 and no observable contribution from interface recombination in the measured current range. An upper limit of 200 cm/s is obtained for the interface recombination velocity. The results show that high-quality interfaces can be obtained in spite of prior air exposure. The technique can be used for the realization of regrown heterojunction bipolar transistors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349159
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