Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 2001-2008
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Plasma jets have been produced by the pulsed laser ablation of bulk ZnSe targets. Electrical measurements show that a sudden increase in ion yield occurs at a threshold pulse energy density of 210 mJ cm−2 pulse−1. The plasmas obtained do not exhibit overall electrical neutrality, but have a net positive charge, while the ZnSe target develops a corresponding negative charge. The initial ion translational kinetic energies are also found to be very low, 〈1 eV. These observations suggest that the ablation process is the result of a buildup of photogenerated holes at the semiconductor surface sufficient to result in disintegration of the lattice and rapid vaporization at low thermal energies.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349485
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