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Electron paramagnetic resonance study of thermal donors in Fe-doped InP (1991)

Bardeleben, H. J. von ; Stievenard, D. ; Kainosho, K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 7392-7396

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of thermal annealing of semi-insulating InP wafers in the 660–820 °C temperature range under SiNx capping condition is studied by electron paramagnetic resonance (EPR) spectroscopy. The annealing leads to the formation of electrically active, deep thermal donors with total defect concentrations up to 1016 cm−3. The thermal donors are of intrinsic origin. By transient EPR spectroscopy the activation energies for electron emission of the dominant thermal donors were determined to be 0.40 and 0.14 eV, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349735

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