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Raman scattering of (GaAs)n(GaP)n short-period superlattices prepared by pulsed jet epitaxy (1991)

Kodama, K. ; Ozeki, M. ; Sakuma, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 6713-6715

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have carried out the Raman-scattering measurement of (GaAs)n(GaP)n short-period superlattices (n=1–5) prepared by the atomic layer epitaxy technique called pulsed jet epitaxy (PJE). The zone-folding effects on the longitudinal-acoustic (LA) phonon were observed for all the samples. The Raman peak observed for the (GaAs)1(GaP)1 monolayer superlattice has also been tentatively assigned to the scattering from zone-folded LA phonons. If the assignment is correct, this is the first observation of the zone-folded LA phonon in a semiconductor monolayer superlattice. The present results suggest that the growth proceeds atomic layer by atomic layer in PJE.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.348893

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