Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3924-3928
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin Ti films containing Sb were deposited on silicon by electron-beam evaporation. The films were annealed in three steps at different temperatures in order to achieve simultaneous Sb doping and self-aligned TiSi2 formation. Sb behavior during the Ti silicide formation and silicide structures were investigated with Auger electron spectroscopy, transmission electron microscopy, and secondary ion mass spectroscopy. Shallow n+-p junctions have been obtained by using a modified self-aligned TiSi2 process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348451
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