Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 8387-8391
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A quantitative model for calculation of the lifetime of quasibound states, including the Γ-X transfer, in a AlAs-GaAs-AlAs double-barrier structure is presented. When device is designed that a Γ-like energy level approaches to an X-like energy level, anticrossing of the Γ-X transition occurs and the lifetime of the state can be several orders larger than that of a pure Γ system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348923
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