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Interaction of Co with Si and SiO2 during rapid thermal annealing (1991)

Chen, W. D. ; Cui, Y. D. ; Hsu, C. C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 7612-7619

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347530

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