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Josephson tunneling and gap structure in Y1Ba2Cu3O7−y/oxide barrier/Pb planar junctions on tetragonal LaSrGaO4 (100) substrates (1991)

Wen, Z. ; Iguchi, I. ; Nakamura, K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 7363-7365

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The Y1Ba2Cu3O7−y/oxide barrier/Pb thin film tunnel junctions are fabricated on the (100) plane of new tetragonal LaSrGaO4 single-crystal substrates by an in situ electron-beam deposition technique. Reproducible Josephson behavior is observed for all fabricated junctions. Above a Josephson critical current, a premature switching voltage of about 1 mV appears. The I-V curve under an applied magnetic field exhibits low-leakage quasiparticle tunneling characteristic. Modulation of Josephson critical current by the applied magnetic field yields a reversible Fraunhofer-like pattern against flux direction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347597

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