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X-ray measurements of ion mixing in amorphous Si/Ge artificial multilayers (1990)

Park, B. ; Spaepen, F. ; Poate, J. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 4556-4560

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Amorphous Si/Ge artificial multilayers with a repeat length around 60 A(ring) have been partially mixed with 1.5-MeV Ar+ ions at temperatures in the range 77–673 K. The diffusive component of the square of the mixing length, obtained by subtracting out the ballistic contribution, does not depend on the dose rate at a given dose, and shows an Arrhenius-type temperature dependence with activation enthalpies between 0.13 and 0.22 eV. Possible mechanisms for migration and annihilation processes of defects are discussed to understand these low activation enthalpies.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346161

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