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Deuterium effusion measurements in doped crystalline silicon (1990)

Stutzmann, Martin ; Brandt, Martin S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 1406-1409

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We describe first results for deuterium effusion from undoped and doped crystalline silicon (n- and p-type) treated in a D2 plasma under different conditions. The dependence of the effusion spectra on doping level, passivation temperature, sample bias, and preannealing are presented and the results are discussed on the basis of different D-bonding configurations in the passivated silicon samples.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347156

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