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Organometallic chemical vapor deposition of strontium titanate (1990)

Feil, W. A. ; Wessels, B. W. ; Tonge, L. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 3858-3861

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345034

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