Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 2354-2358
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The average grain size in Ar+-irradiated Cu films at room temperature increases with ion dose, following a relationship of d¯3.3−d¯3.30 =Kφ. For Ar+ and Xe++ irradiations, the grain growth kinetics are independent of temperature at T≤−60 °C and increase with temperature in the range from −60 to 102 °C. The activation energy of the temperature-dependent contribution to grain boundary migration is about 0.14 eV, and the growth rate is independent of ion flux, suggesting that the ion-irradiation-induced grain growth is associated with the thermal spike diffusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345530
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